A well-structured metastable ceria surface

DC ElementWertSprache
dc.contributor.authorOlbrich, R.
dc.contributor.authorPieper, H. H.
dc.contributor.authorOelke, R.
dc.contributor.authorWilkens, H.
dc.contributor.authorWollschlaeger, J.
dc.contributor.authorZoellner, M. H.
dc.contributor.authorSchroeder, T.
dc.contributor.authorReichling, M.
dc.date.accessioned2021-12-23T16:12:07Z-
dc.date.available2021-12-23T16:12:07Z-
dc.date.issued2014
dc.identifier.issn00036951
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/10050-
dc.description.abstractBy the growth of a 180 nm thick film on Si(111), we produce a metastable ceria surface with a morphology dominated by terraced pyramids with an oriented triangular base. Changes in the nanoscale surface morphology and local surface potential due to annealing at temperatures ranging from 300 K to 1150 K in the ultra-high vacuum are studied with non-contact atomic force microscopy and Kelvin probe force microscopy. As the surface is stable in the temperature range of 300 K to 850 K, it is most interesting for applications requiring regular steps with a height of one O-Ce-O triple layer. (C) 2014 AIP Publishing LLC.
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (DFG)German Research Foundation (DFG) [WO 533/16-1, RE 1186/12-1, SCHR 1123/4-1]; COST ActionEuropean Cooperation in Science and Technology (COST) [CM1104]; The authors are indebted to Philipp Maass for a stimulating discussion on the ceria growth mechanism. Support by the Deutsche Forschungsgemeinschaft (DFG) via Grant Nos. WO 533/16-1, RE 1186/12-1, and SCHR 1123/4-1 and by the COST Action CM1104 is gratefully acknowledged.
dc.language.isoen
dc.publisherAMER INST PHYSICS
dc.relation.ispartofAPPLIED PHYSICS LETTERS
dc.subjectCEO2
dc.subjectCEO2(111)
dc.subjectFILMS
dc.subjectGROWTH
dc.subjectMORPHOLOGY
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectPT(111)
dc.subjectSI(111)
dc.titleA well-structured metastable ceria surface
dc.typejournal article
dc.identifier.doi10.1063/1.4866667
dc.identifier.isiISI:000332619100045
dc.description.volume104
dc.description.issue8
dc.contributor.orcid0000-0003-3186-9000
dc.contributor.researcheridB-1123-2011
dc.identifier.eissn10773118
dc.publisher.place1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
dcterms.isPartOf.abbreviationAppl. Phys. Lett.
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.deptidfb04-
crisitem.author.orcid0000-0003-3186-9000-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidWiHe322-
crisitem.author.netidReMi818-
Zur Kurzanzeige

Seitenaufrufe

1
Letzte Woche
0
Letzter Monat
0
geprüft am 19.05.2024

Google ScholarTM

Prüfen

Altmetric