Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)
DC Element | Wert | Sprache |
---|---|---|
dc.contributor.author | Flege, Jan Ingo | |
dc.contributor.author | Kaemena, Bjoern | |
dc.contributor.author | Gevers, Sebastian | |
dc.contributor.author | Bertram, Florian | |
dc.contributor.author | Wilkens, Torsten | |
dc.contributor.author | Bruns, Daniel | |
dc.contributor.author | Baetjer, Jan | |
dc.contributor.author | Schmidt, Thomas | |
dc.contributor.author | Wollschlaeger, Joachim | |
dc.contributor.author | Falta, Jens | |
dc.date.accessioned | 2021-12-23T16:12:24Z | - |
dc.date.available | 2021-12-23T16:12:24Z | - |
dc.date.issued | 2011 | |
dc.identifier.issn | 10980121 | |
dc.identifier.uri | https://osnascholar.ub.uni-osnabrueck.de/handle/unios/10197 | - |
dc.description.abstract | Ultrathin Ce(2)O(3) layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface. | |
dc.language.iso | en | |
dc.publisher | AMER PHYSICAL SOC | |
dc.relation.ispartof | PHYSICAL REVIEW B | |
dc.subject | CEO2 LAYERS | |
dc.subject | CL | |
dc.subject | CRYSTAL-STRUCTURE | |
dc.subject | DESORPTION | |
dc.subject | DIELECTRICS | |
dc.subject | Materials Science | |
dc.subject | Materials Science, Multidisciplinary | |
dc.subject | PHOTOELECTRON-SPECTROSCOPY | |
dc.subject | Physics | |
dc.subject | Physics, Applied | |
dc.subject | Physics, Condensed Matter | |
dc.subject | STABILITY | |
dc.subject | SURFACES | |
dc.subject | TEMPERATURE EPITAXIAL-GROWTH | |
dc.subject | THIN-FILMS | |
dc.title | Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111) | |
dc.type | journal article | |
dc.identifier.doi | 10.1103/PhysRevB.84.235418 | |
dc.identifier.isi | ISI:000297764700004 | |
dc.description.volume | 84 | |
dc.description.issue | 23 | |
dc.contributor.orcid | 0000-0002-8346-6863 | |
dc.contributor.orcid | 0000-0002-4154-822X | |
dc.contributor.orcid | 0000-0001-9002-4118 | |
dc.contributor.researcherid | J-6354-2012 | |
dc.contributor.researcherid | F-4821-2016 | |
dc.contributor.researcherid | AAD-3164-2020 | |
dc.publisher.place | ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA | |
dcterms.isPartOf.abbreviation | Phys. Rev. B | |
dcterms.oaStatus | Green Published | |
crisitem.author.dept | Universität Osnabrück | - |
crisitem.author.dept | FB 04 - Physik | - |
crisitem.author.deptid | fb04 | - |
crisitem.author.orcid | 0000-0001-9002-4118 | - |
crisitem.author.orcid | 0000-0002-3043-3718 | - |
crisitem.author.parentorg | Universität Osnabrück | - |
crisitem.author.netid | BeFl001 | - |
crisitem.author.netid | WoJo788 | - |
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geprüft am 20.05.2024