Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)

DC FieldValueLanguage
dc.contributor.authorFlege, Jan Ingo
dc.contributor.authorKaemena, Bjoern
dc.contributor.authorGevers, Sebastian
dc.contributor.authorBertram, Florian
dc.contributor.authorWilkens, Torsten
dc.contributor.authorBruns, Daniel
dc.contributor.authorBaetjer, Jan
dc.contributor.authorSchmidt, Thomas
dc.contributor.authorWollschlaeger, Joachim
dc.contributor.authorFalta, Jens
dc.date.accessioned2021-12-23T16:12:24Z-
dc.date.available2021-12-23T16:12:24Z-
dc.date.issued2011
dc.identifier.issn10980121
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/10197-
dc.description.abstractUltrathin Ce(2)O(3) layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface.
dc.language.isoen
dc.publisherAMER PHYSICAL SOC
dc.relation.ispartofPHYSICAL REVIEW B
dc.subjectCEO2 LAYERS
dc.subjectCL
dc.subjectCRYSTAL-STRUCTURE
dc.subjectDESORPTION
dc.subjectDIELECTRICS
dc.subjectMaterials Science
dc.subjectMaterials Science, Multidisciplinary
dc.subjectPHOTOELECTRON-SPECTROSCOPY
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectPhysics, Condensed Matter
dc.subjectSTABILITY
dc.subjectSURFACES
dc.subjectTEMPERATURE EPITAXIAL-GROWTH
dc.subjectTHIN-FILMS
dc.titleSilicate-free growth of high-quality ultrathin cerium oxide films on Si(111)
dc.typejournal article
dc.identifier.doi10.1103/PhysRevB.84.235418
dc.identifier.isiISI:000297764700004
dc.description.volume84
dc.description.issue23
dc.contributor.orcid0000-0002-8346-6863
dc.contributor.orcid0000-0002-4154-822X
dc.contributor.orcid0000-0001-9002-4118
dc.contributor.researcheridJ-6354-2012
dc.contributor.researcheridF-4821-2016
dc.contributor.researcheridAAD-3164-2020
dc.publisher.placeONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
dcterms.isPartOf.abbreviationPhys. Rev. B
dcterms.oaStatusGreen Published
crisitem.author.deptUniversität Osnabrück-
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.orcid0000-0001-9002-4118-
crisitem.author.orcid0000-0002-3043-3718-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidBeFl001-
crisitem.author.netidWoJo788-
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