PHOTOREFRACTIVE EFFECT IN GAAS AT LOW-TEMPERATURE - INFLUENCE OF THE METASTABLE STATE OF THE EL2 DEFECT
Autor(en): | DELAYE, P SUGG, B |
Stichwörter: | CAPTURE; CENTERS; CRYSTALS; GALLIUM-ARSENIDE; HOLE-ELECTRON COMPETITION; HOLOGRAPHIC STORAGE; ILLUMINATION; INP-FE; LEVEL; Materials Science; Materials Science, Multidisciplinary; Optics; RECOVERY | Erscheinungsdatum: | 1995 | Herausgeber: | ELSEVIER SCIENCE BV | Enthalten in: | OPTICAL MATERIALS | Band: | 4 | Ausgabe: | 2-3 | Startseite: | 256 | Seitenende: | 261 | Beschreibung: | Symposium on Photorefractive Materials, at the E-MRS 1994 Spring Meeting, STRASBOURG, FRANCE, MAY 24-26, 1994 |
ISSN: | 09253467 | DOI: | 10.1016/0925-3467(94)00070-0 |
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