PHOTOREFRACTIVE EFFECT IN GAAS AT LOW-TEMPERATURE - INFLUENCE OF THE METASTABLE STATE OF THE EL2 DEFECT

Autor(en): DELAYE, P
SUGG, B
Stichwörter: CAPTURE; CENTERS; CRYSTALS; GALLIUM-ARSENIDE; HOLE-ELECTRON COMPETITION; HOLOGRAPHIC STORAGE; ILLUMINATION; INP-FE; LEVEL; Materials Science; Materials Science, Multidisciplinary; Optics; RECOVERY
Erscheinungsdatum: 1995
Herausgeber: ELSEVIER SCIENCE BV
Enthalten in: OPTICAL MATERIALS
Band: 4
Ausgabe: 2-3
Startseite: 256
Seitenende: 261
Beschreibung: 
Symposium on Photorefractive Materials, at the E-MRS 1994 Spring Meeting, STRASBOURG, FRANCE, MAY 24-26, 1994
ISSN: 09253467
DOI: 10.1016/0925-3467(94)00070-0

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