TEMPERATURE ENHANCEMENT OF THE PHOTOREFRACTIVE EFFECT IN GAAS DUE TO THE METASTABLE STATE OF THE EL2 DEFECT

Autor(en): DELAYE, P
SUGG, B
Stichwörter: COMPENSATION; CRYSTALS; DEEP-LEVEL CENTERS; GALLIUM-ARSENIDE; HOLE-ELECTRON COMPETITION; HOLOGRAPHIC STORAGE; ILLUMINATION; INP-FE; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; RECOVERY; SEMI-INSULATING GAAS
Erscheinungsdatum: 1994
Herausgeber: AMERICAN PHYSICAL SOC
Enthalten in: PHYSICAL REVIEW B
Band: 50
Ausgabe: 23
Startseite: 16973
Seitenende: 16984
ISSN: 01631829
DOI: 10.1103/PhysRevB.50.16973

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