Homogeneous Si films on CaF2/Si(111) due to boron enhanced solid phase epitaxy

DC FieldValueLanguage
dc.contributor.authorWollschlaeger, J.
dc.contributor.authorDeiter, C.
dc.contributor.authorBierkandt, M.
dc.contributor.authorGerdes, A.
dc.contributor.authorBaeumer, M.
dc.contributor.authorWang, C. R.
dc.contributor.authorMueller, B. H.
dc.contributor.authorHofmann, K. R.
dc.date.accessioned2021-12-23T16:14:31Z-
dc.date.available2021-12-23T16:14:31Z-
dc.date.issued2006
dc.identifier.issn00396028
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/11121-
dc.description23rd European Conference on Surface Science (ECOSS-23), Freie Univ, Berlin, GERMANY, SEP 04-09, 2005
dc.description.abstractThe structure and morphology of Si/CaF2/Si(111) structures have been investigated by X-ray diffraction (XRD, GIXRD) and X-ray photoelectron spectroscopy (XPS). While CaF2 films were grown via molecular beam epitaxy (MBE), Si films on CaF2/Si(111) are fabricated by surfactant enhanced solid phase epitaxy (SE-SPE). Here Boron was used as a surfactant to obtain semiconductor films of homogeneous thickness. The Si films are entirely relaxed while the CaF2 films have both pseudomorphic and relaxed crystallites. After exposure to ambient conditions, the Si films have a very thin native oxide film. The homogeneous Si film partially prevents the incorporation of impurities at the interface between the Si substrate and CaF2 via migration along residual defects of the CaF2 film. (c) 2006 Elsevier B.V. All rights reserved.
dc.language.isoen
dc.publisherELSEVIER SCIENCE BV
dc.relation.ispartofSURFACE SCIENCE
dc.subjectCAF2
dc.subjectChemistry
dc.subjectChemistry, Physical
dc.subjectgrazing incidence X-ray diffraction
dc.subjectGROWTH
dc.subjectHETEROSTRUCTURES
dc.subjectINTERFACE
dc.subjectmolecular beam epitaxy
dc.subjectMOLECULAR-BEAM EPITAXY
dc.subjectmultilayers
dc.subjectPhysics
dc.subjectPhysics, Condensed Matter
dc.subjectRESONANT-TUNNELING DIODES
dc.subjectSI(111)
dc.subjectSILICON
dc.subjectsolid phase epitaxy
dc.subjectsurfactant
dc.titleHomogeneous Si films on CaF2/Si(111) due to boron enhanced solid phase epitaxy
dc.typeconference paper
dc.identifier.doi10.1016/j.susc.2005.12.071
dc.identifier.isiISI:000241450600026
dc.description.volume600
dc.description.issue18, SI
dc.description.startpage3637
dc.description.endpage3641
dc.contributor.orcid0000-0002-8620-1764
dc.contributor.orcid0000-0002-8620-1764
dc.contributor.researcheridS-5441-2016
dc.contributor.researcheridAAC-2802-2019
dc.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
dcterms.isPartOf.abbreviationSurf. Sci.
dcterms.oaStatusGreen Published
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