Stacking behavior of twin-free type-B oriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems

DC FieldValueLanguage
dc.contributor.authorZoellner, M. H.
dc.contributor.authorDabrowski, J.
dc.contributor.authorZaumseil, P.
dc.contributor.authorGiussani, A.
dc.contributor.authorSchubert, M. A.
dc.contributor.authorLupina, G.
dc.contributor.authorWilkens, H.
dc.contributor.authorWollschlaeger, J.
dc.contributor.authorReichling, M.
dc.contributor.authorBaeumer, M.
dc.contributor.authorSchroeder, T.
dc.date.accessioned2021-12-23T16:15:26Z-
dc.date.available2021-12-23T16:15:26Z-
dc.date.issued2012
dc.identifier.issn24699950
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/11427-
dc.description.abstractTailored CeO2/Pr2O3 thin-film oxide heterostructures are of interest for model catalysis studies by surface science techniques. For this purpose, thin CeO2(111) films were grown by molecular beam epitaxy on hex-Pr2O3(0001)/Si(111) as well as on cub-Pr2O3(111)/Si(111) support systems. A comparative, rigorous structure investigation by reflection high-energy electron diffraction transmission electron microscopy and laboratory and synchrotron based x-ray diffraction is reported. It is found that twin-free, exclusively type-B oriented CeO2(111) films are obtained on both oxide supports. CeO2(111) films adopt the stacking sequence from the cub-Pr2O3(111) buffer, but the transfer of the stacking information is less evident in the case of hex-Pr2O3(0001) films. Ab initio calculations are applied to understand the unusual stacking behavior of the CeO2(111) on the hex-Pr2O3(0001)/Si(111) system. It is revealed that the type-B stacking configuration is the more favorable configuration by 8 eV/nm(2) due to electronic and crystallographic factors.
dc.description.sponsorship``Deutsche Forschungsgemeinschaft'' (DFG)German Research Foundation (DFG); Neumann Institute for Computing (NIC) [hfo06]; Portions of this research were carried out at the light source W1 at DESY, which is a member of the Helmholtz Association (HGF). We would like to thank W. Caliebe for assistance. Ab initio calculations were performed on the JUROPA supercomputer in Julich within the Neumann Institute for Computing (NIC) Grant No. hfo06. Furthermore, we are grateful to the ``Deutsche Forschungsgemeinschaft'' (DFG) for financial support.
dc.language.isoen
dc.publisherAMER PHYSICAL SOC
dc.relation.ispartofPHYSICAL REVIEW B
dc.subjectCE
dc.subjectDIOXIDE
dc.subjectEPITAXIAL-GROWTH
dc.subjectETHYLENE
dc.subjectHETEROSTRUCTURES
dc.subjectMaterials Science
dc.subjectMaterials Science, Multidisciplinary
dc.subjectOXIDES
dc.subjectOXYGEN STORAGE CAPACITY
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectPhysics, Condensed Matter
dc.subjectPRASEODYMIUM SESQUIOXIDE FILMS
dc.subjectREDOX PROPERTIES
dc.subjectSI(111)
dc.titleStacking behavior of twin-free type-B oriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems
dc.typejournal article
dc.identifier.doi10.1103/PhysRevB.85.035302
dc.identifier.isiISI:000298864000002
dc.description.volume85
dc.description.issue3
dc.contributor.orcid0000-0003-3186-9000
dc.contributor.orcid0000-0001-6255-391X
dc.contributor.orcid0000-0002-8620-1764
dc.contributor.orcid0000-0002-8620-1764
dc.contributor.orcid0000-0002-2197-2488
dc.contributor.researcheridB-1123-2011
dc.contributor.researcheridD-3419-2012
dc.contributor.researcheridAAC-2802-2019
dc.contributor.researcheridS-5441-2016
dc.identifier.eissn24699969
dc.publisher.placeONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
dcterms.isPartOf.abbreviationPhys. Rev. B
dcterms.oaStatusGreen Published
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.deptidfb04-
crisitem.author.orcid0000-0003-3186-9000-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidWiHe322-
crisitem.author.netidReMi818-
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