Post deposition annealing of epitaxial Ce1-xPrxO2-delta films grown on Si(111)
Autor(en): | Wilkens, H. Spiess, W. Zoellner, M. H. Niu, G. Schroeder, T. Wollschlaeger, J. |
Stichwörter: | CERIA; Chemistry; Chemistry, Physical; DIFFRACTION; Physics; Physics, Atomic, Molecular & Chemical; PR; SURFACES; X=0-1 THIN-FILMS | Erscheinungsdatum: | 2015 | Herausgeber: | ROYAL SOC CHEMISTRY | Journal: | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | Volumen: | 17 | Ausgabe: | 15 | Startseite: | 9991 | Seitenende: | 9996 | Zusammenfassung: | In this work the structural and morphological changes of Ce1-xPrxO2-delta (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed. |
ISSN: | 14639076 | DOI: | 10.1039/c5cp01105a |
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geprüft am 19.05.2024