Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K

Abstract

High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g(2)(tau = 0) = 0.28 /- 0.20 can be tracked up to T = 200K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device. (C) 2014 AIP Publishing LLC.