Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K

Autor(en): Quitsch, Wolf
Kuemmell, Tilmar
Gust, Arne
Kruse, Carsten
Hommel, Detlef
Bacher, Gerd
Stichwörter: DEMAND; DIAMOND; MOLECULE; NANOWIRE; Physics; Physics, Applied; ROOM-TEMPERATURE
Erscheinungsdatum: 2014
Herausgeber: AMER INST PHYSICS
Journal: APPLIED PHYSICS LETTERS
Volumen: 105
Ausgabe: 9
Zusammenfassung: 
High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g(2)(tau = 0) = 0.28 /- 0.20 can be tracked up to T = 200K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device. (C) 2014 AIP Publishing LLC.
ISSN: 00036951
DOI: 10.1063/1.4894729

Show full item record

Google ScholarTM

Check

Altmetric