Relaxor ferroelectrics - From random field models to domain state physics

Autor(en): Kleemann, W
Dec, J
Miga, S
Pankrath, R
Stichwörter: aging; domains; ISING-MODEL; Materials Science; Materials Science, Multidisciplinary; ORDER-PARAMETER; PHASE-TRANSITIONS; Physics; Physics, Condensed Matter; POLARIZATION; random fields; relaxation; relaxor ferroelectric; susceptibility; SYSTEMS
Erscheinungsdatum: 2004
Herausgeber: TAYLOR & FRANCIS LTD
Journal: FERROELECTRICS
Volumen: 302
Startseite: 493
Seitenende: 498
Zusammenfassung: 
Substitutional charge disorder inferroelectrics giving rise to quenched electric random fields (RFs) is probably at the origin of their relaxor behavior. Fluctuating polar nanoregions in the paraelectric regime are related to the spatial fluctuations of the RFs. While they destroy the ferroelectric phase transition and give rise to a glassy state in cubic relaxors like PbMg1/3Nb2/3O3, uniaxial systems like Sri(1-x)Ba(x)Nb(2)O(6) exhibit RF Ising model behavior with non-classical critical exponents, e.g. alpha approximate to 0. Metastable pinned nanodomains in the ferroelectric regime are at the origin of non-Debye dielectric response, non-exponential relaxation, aging and memory effects.
Beschreibung: 
10th European Meeting on Ferroelectricity, Univ Cambridge, Cambridge, ENGLAND, AUG 03-08, 2003
ISSN: 00150193
DOI: 10.1080/00150190490455016

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