XPS characterisation of neodymium gallate wafers
DC Element | Wert | Sprache |
---|---|---|
dc.contributor.author | Talik, E | |
dc.contributor.author | Kruczek, A | |
dc.contributor.author | Sakowska, H | |
dc.contributor.author | Ujma, Z | |
dc.contributor.author | Gala, M | |
dc.contributor.author | Neumann, M | |
dc.date.accessioned | 2021-12-23T16:16:33Z | - |
dc.date.available | 2021-12-23T16:16:33Z | - |
dc.date.issued | 2004 | |
dc.identifier.issn | 09258388 | |
dc.identifier.uri | https://osnascholar.ub.uni-osnabrueck.de/handle/unios/11926 | - |
dc.description.abstract | XPS examinations of NdGaO3 single crystals were performed. A change of the chemical composition was found in wafers cut from the beginning, middle and end part of a crystal crown along the [011] direction. The existence of core level satellites at low binding energy related to defects was revealed. Unpolished, polished and substrates etched with H3PO4 show a decrease of gallium concentration in relation to a broken surface and to the nominal composition. Annealing of the substrates at different temperatures causes a decomposition due to escape of gallium not only from the surface but from inner parts as well. A comparison of the wafers from the crystals grown along different crystallographic direction reveals changes of the chemical composition and a variable level of defects. This was confirmed by etch pitch density measurements. The above measurements demonstrate the high sensitivity of gallium on processing. (C) 2004 Elsevier B.V. All rights reserved. | |
dc.language.iso | en | |
dc.publisher | ELSEVIER SCIENCE SA | |
dc.relation.ispartof | JOURNAL OF ALLOYS AND COMPOUNDS | |
dc.subject | Chemistry | |
dc.subject | Chemistry, Physical | |
dc.subject | CRYSTALS | |
dc.subject | electronic state | |
dc.subject | GAN | |
dc.subject | GROWTH | |
dc.subject | Materials Science | |
dc.subject | Materials Science, Multidisciplinary | |
dc.subject | Metallurgy & Metallurgical Engineering | |
dc.subject | photoelectron spectroscopy | |
dc.subject | single crystal | |
dc.subject | SUBSTRATE | |
dc.title | XPS characterisation of neodymium gallate wafers | |
dc.type | journal article | |
dc.identifier.doi | 10.1016/j.jallcom.2004.01.037 | |
dc.identifier.isi | ISI:000223801000048 | |
dc.description.volume | 377 | |
dc.description.issue | 1-2 | |
dc.description.startpage | 259 | |
dc.description.endpage | 267 | |
dc.contributor.orcid | 0000-0002-4994-055X | |
dc.contributor.researcherid | C-3515-2018 | |
dc.identifier.eissn | 18734669 | |
dc.publisher.place | PO BOX 564, 1001 LAUSANNE, SWITZERLAND | |
dcterms.isPartOf.abbreviation | J. Alloy. Compd. |
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geprüft am 09.06.2024