Ultrathin, epitaxial cerium dioxide on silicon
DC Element | Wert | Sprache |
---|---|---|
dc.contributor.author | Flege, Jan Ingo | |
dc.contributor.author | Kaemena, Bjoern | |
dc.contributor.author | Hoecker, Jan | |
dc.contributor.author | Bertram, Florian | |
dc.contributor.author | Wollschlaeger, Joachim | |
dc.contributor.author | Schmidt, Thomas | |
dc.contributor.author | Falta, Jens | |
dc.date.accessioned | 2021-12-23T16:17:39Z | - |
dc.date.available | 2021-12-23T16:17:39Z | - |
dc.date.issued | 2014 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | https://osnascholar.ub.uni-osnabrueck.de/handle/unios/12348 | - |
dc.description.abstract | It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness. (C) 2014 AIP Publishing LLC. | |
dc.description.sponsorship | COST ActionEuropean Cooperation in Science and Technology (COST) [CM1104]; Portions of this research were carried out at the light source DORIS III at DESY. DESY is a member of the Helmholtz Association (HGF). We would like to thank Dmitri Novikov for assistance in using beamline BW2, Sebastian Gevers for assistance in quantitative XRD analysis and the COST Action CM1104 for partial support. | |
dc.language.iso | en | |
dc.publisher | AMER INST PHYSICS | |
dc.relation.ispartof | APPLIED PHYSICS LETTERS | |
dc.subject | CEO2 | |
dc.subject | DESORPTION | |
dc.subject | GATE DIELECTRICS | |
dc.subject | GROWTH | |
dc.subject | INTERFACE | |
dc.subject | OXIDE | |
dc.subject | PHOTOELECTRON-SPECTROSCOPY | |
dc.subject | Physics | |
dc.subject | Physics, Applied | |
dc.subject | SI OXIDATION | |
dc.subject | SI(111) | |
dc.subject | SURFACES | |
dc.title | Ultrathin, epitaxial cerium dioxide on silicon | |
dc.type | journal article | |
dc.identifier.doi | 10.1063/1.4870585 | |
dc.identifier.isi | ISI:000334408500016 | |
dc.description.volume | 104 | |
dc.description.issue | 13 | |
dc.contributor.orcid | 0000-0002-4154-822X | |
dc.contributor.orcid | 0000-0002-8346-6863 | |
dc.contributor.orcid | 0000-0001-9002-4118 | |
dc.contributor.researcherid | F-4821-2016 | |
dc.contributor.researcherid | AAD-3164-2020 | |
dc.contributor.researcherid | J-6354-2012 | |
dc.identifier.eissn | 10773118 | |
dc.publisher.place | CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA | |
dcterms.isPartOf.abbreviation | Appl. Phys. Lett. | |
dcterms.oaStatus | Green Published | |
crisitem.author.dept | Universität Osnabrück | - |
crisitem.author.dept | FB 04 - Physik | - |
crisitem.author.deptid | fb04 | - |
crisitem.author.orcid | 0000-0001-9002-4118 | - |
crisitem.author.orcid | 0000-0002-3043-3718 | - |
crisitem.author.parentorg | Universität Osnabrück | - |
crisitem.author.netid | BeFl001 | - |
crisitem.author.netid | WoJo788 | - |
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geprüft am 20.05.2024