Stabilization of the ceria i-phase (Ce7O12) surface on Si(111)

Autor(en): Wilkens, H. 
Schuckmann, O.
Oelke, R.
Gevers, S.
Schaefer, A.
Baeumer, M.
Zoellner, M. H.
Schroeder, T.
Wollschlaeger, J.
Stichwörter: CEO2; EPITAXIAL-GROWTH; FILMS; Physics; Physics, Applied; REDUCTION; SYSTEM
Erscheinungsdatum: 2013
Herausgeber: AMER INST PHYSICS
Enthalten in: APPLIED PHYSICS LETTERS
Band: 102
Ausgabe: 11
Zusammenfassung: 
In this work a 250 nm CeO2(111) film grown on a hex-Pr2O3(0001)/Si(111) system is annealed at 660 degrees C for 30 min to form the i bulk phase of Ce7O12 as controlled by x-ray photoelectron spectroscopy. The (111) surface of the stabilized i phase is characterized via high-resolution low-energy electron diffraction. The i-phase surface exhibits a (root 7 x root 7)R19.1 degrees superstructure with two mirror domains. This structure is attributed to a periodic ordering of oxygen vacancies compared to the fluorite structure of CeO2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795867]
ISSN: 00036951
DOI: 10.1063/1.4795867

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