Contrast in scanning probe microscopy images of ultrathin insulator films

Autor(en): Klust, A
Yu, QM
Olmstead, MA
Ohta, T
Ohuchi, FS
Bierkandt, M
Deiter, C
Wollschlager, J 
Stichwörter: CAF2; CAF2/SI(111); ELECTRONIC-STRUCTURE; FORCE MICROSCOPY; GROWTH-KINETICS; INTERFACE; Physics; Physics, Applied; SI(111); SPECTROSCOPY; STM; TUNNELING-MICROSCOPY
Erscheinungsdatum: 2006
Herausgeber: AMER INST PHYSICS
Journal: APPLIED PHYSICS LETTERS
Volumen: 88
Ausgabe: 6
Zusammenfassung: 
The contrast in scanning probe microscopy images of ultrathin CaF2 films epitaxially grown on Si(111) is studied using scanning tunneling microscopy (STM) and scanning force microscopy (SFM). Material contrast between CaF2 and the underlying Si-CaF interface layer can be achieved by multiple scan modes. STM images of CaF2/Si(111) exhibit a distinct contrast depending on the bias voltage. Using SFM, CaF2 and CaF can be distinguished by the contact potential difference (CPD) determined by measuring the bias voltage dependence of the cantilever resonance frequency. The CPD also causes a material contrast in the dissipation signal.
ISSN: 00036951
DOI: 10.1063/1.2172397

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