Studies on transparent spinel magnesium indium oxide thin films prepared by chemical spray pyrolysis

Autor(en): Raj, A. Moses Ezhil
Senthilkumar, V.
Swaminathan, V.
Wollschlaeger, Joachim 
Suendorf, M.
Neumann, M.
Jayachandran, M.
Sanjeeviraja, C.
Stichwörter: Electrical conductivity; ELECTRICAL-PROPERTIES; GENERATION; HIGH ELECTROCONDUCTIVITY; Magnesium indium oxide; Materials Science; Materials Science, Coatings & Films; Materials Science, Multidisciplinary; MGIN2O4; Optical properties; OPTICAL-PROPERTIES; OXYGEN; PHASE; Physics; Physics, Applied; Physics, Condensed Matter; Rutherford backscattering spectroscopy; SPECTROSCOPY; Spray coating technique; Thin films; WIDE BAND-GAP; X-ray diffraction; X-RAY PHOTOELECTRON; X-ray photoelectron spectra
Erscheinungsdatum: 2008
Herausgeber: ELSEVIER SCIENCE SA
Journal: THIN SOLID FILMS
Volumen: 517
Ausgabe: 2
Startseite: 510
Seitenende: 516
Zusammenfassung: 
Ternary semiconducting oxide compound magnesium indium oxide films (MgIn2O4), manifesting high transparency were prepared by metal organic chemical spray pyrolysis technique. Precursors prepared for various cationic ratios of Mg/In=0.35, 0.40, 0.45 and 0.50 were thermally sprayed onto quartz substrates, decomposed at 450 degrees C and the spinel phase evolution was studied. X-ray diffraction, Rutherford backscattering and X-ray photoelectron spectroscopy studies have been conducted to confirm the formation of single-phase MgIn2O4 films with Mg/In ratio 0.50. From optical transmission studies, the observed optical band gaps varied from 3.18 to 3.86 eV (0.35 < Mg/In < 0.5). The electrical conductivity variations of these films were measured in the temperature range between 30 and 150 degrees C by four-probe technique (34.07-1.44x10(-5) S cm(-1)) and the Hall coefficient showed n-type electrical conduction and high carrier concentration (0.16x 10(20)-0.89x (17) cm(-3)). (c) 2008 Elsevier B.V. All rights reserved.
ISSN: 00406090
DOI: 10.1016/j.tsf.2008.06.075

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