Hole-doping of mechanically exfoliated graphene by confined hydration layers

DC FieldValueLanguage
dc.contributor.authorBollmann, Tjeerd R. J.
dc.contributor.authorAntipina, Liubov Yu.
dc.contributor.authorTemmen, Matthias
dc.contributor.authorReichling, Michael
dc.contributor.authorSorokin, Pavel B.
dc.date.accessioned2021-12-23T16:21:03Z-
dc.date.available2021-12-23T16:21:03Z-
dc.date.issued2015
dc.identifier.issn19980124
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/13711-
dc.description.abstractBy the use of non-contact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM), we measure the local surface potential of mechanically exfoliated graphene on the prototypical insulating hydrophilic substrate of CaF2(111). Hydration layers confined between the graphene and the CaF2 substrate, resulting from the graphene's preparation under ambient conditions on the hydrophilic substrate surface, are found to electronically modify the graphene as the material's electron density transfers from graphene to the hydration layer. Density functional theory (DFT) calculations predict that the first 2 to 3 water layers adjacent to the graphene hole-dope the graphene by several percent of a unit charge per unit cell.
dc.description.sponsorshipDeutsche ForschungsgemeinschaftGerman Research Foundation (DFG) [SPP 1459]; Hans Muhlenhoff-Stiftung; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [K2-2015-033]; Russian Science FoundationRussian Science Foundation (RSF) [14-13-00139]; This work was supported by the SPP 1459 of the Deutsche Forschungsgemeinschaft. We thank O. Ochedowski for help in sample preparation. M. T. gratefully appreciates support from the Hans Muhlenhoff-Stiftung. We are grateful to the ``Chebishev'' and ``Lomonosov'' supercomputers of Moscow State University and the Joint Supercomputer Center of the Russian Academy of Sciences for the possibility of using a cluster computer for quantum-chemical calculations. P. B. S. gratefully acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of the Increase Competitiveness Program of NUST ``MISiS'' (No. K2-2015-033). L. Y. A. acknowledges the support from the Russian Science Foundation (No. 14-13-00139).
dc.language.isoen
dc.publisherTSINGHUA UNIV PRESS
dc.relation.ispartofNANO RESEARCH
dc.subjectAMBIENT CONDITIONS
dc.subjectATOMIC-FORCE MICROSCOPY
dc.subjectChemistry
dc.subjectChemistry, Physical
dc.subjectelectronic transport in nanoscale materials and structures
dc.subjectgraphene
dc.subjectINITIO MOLECULAR-DYNAMICS
dc.subjectliquid-solid interface structure
dc.subjectMaterials Science
dc.subjectMaterials Science, Multidisciplinary
dc.subjectMICA
dc.subjectNanoscience & Nanotechnology
dc.subjectnon-contact atomic force microscopy (NC-AFM, KPFM)
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectRAMAN-SPECTROSCOPY
dc.subjectScience & Technology - Other Topics
dc.subjectSUBSTRATE
dc.subjectWATER
dc.titleHole-doping of mechanically exfoliated graphene by confined hydration layers
dc.typejournal article
dc.identifier.doi10.1007/s12274-015-0807-x
dc.identifier.isiISI:000361057000024
dc.description.volume8
dc.description.issue9
dc.description.startpage3020
dc.description.endpage3026
dc.contributor.orcid0000-0003-1176-317X
dc.contributor.orcid0000-0003-3186-9000
dc.contributor.orcid0000-0001-5248-1799
dc.contributor.researcheridA-1800-2014
dc.contributor.researcheridN-2685-2015
dc.contributor.researcheridB-1123-2011
dc.contributor.researcheridC-9749-2011
dc.identifier.eissn19980000
dc.publisher.placeTSINGHUA UNIV, RM A703, XUEYAN BLDG, BEIJING, 10084, PEOPLES R CHINA
dcterms.isPartOf.abbreviationNano Res.
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.orcid0000-0003-3186-9000-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidReMi818-
Show simple item record

Page view(s)

2
Last Week
0
Last month
0
checked on Apr 23, 2024

Google ScholarTM

Check

Altmetric