Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-delta (X=0-1) thin films on Si(111)

Autor(en): Zoellner, Marvin Hartwig
Zaumseil, Peter
Wilkens, Henrik 
Gevers, Sebastian
Wollschlaeger, Joachim 
Baeumer, Marcus
Xie, Ya-Hong
Niu, Gang
Schroeder, Thomas
Stichwörter: CARBON-DIOXIDE; CEO2; Crystal structure; Crystallography; GROWTH; Materials Science; Materials Science, Multidisciplinary; METHANE; Molecular beam epitaxy; OXIDATION; OXIDE; Oxides; OXYGEN; Physics; Physics, Applied; PRASEODYMIUM SESQUIOXIDE FILMS; Rare-earth compounds; REDUCTION; X-ray diffraction; XPS
Erscheinungsdatum: 2012
Herausgeber: ELSEVIER
Volumen: 355
Ausgabe: 1
Startseite: 159
Seitenende: 165
Epitaxial oxide thin film layers are of interest for model catalytic studies. We report the growth of Ce1 - xPrxO2 - delta mixed oxide layers of different stoichiometries (x = 0-1) and oxygen deficiency (delta >0) on Si(111) by co-evaporating molecular beam epitaxy. The main objective is to identify the crystal phases and to investigate the correlation between compositions and crystal structures. X-ray photoemission spectroscopy was performed to quantify the stoichiometries. An extensive laboratory and synchrotron based X-ray diffraction analysis was carried out to determine the vertical and lateral lattice orientations and the strain status of the layers. The study revealed that single crystalline Ce1 - xPrxO2 - delta/Si(111) heterostructures can be epitaxially grown on Si(111) for model catalytic studies. In addition to the structure-stoichiometry relationship typical to mixed oxide bulk powders, we identified a hexagonal mixed Ce-Pr oxide thin film phase not yet reported in bulk studies. (C) 2012 Elsevier B.V. All rights reserved.
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2012.06.050

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