Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-delta (X=0-1) thin films on Si(111)
Autor(en): | Zoellner, Marvin Hartwig Zaumseil, Peter Wilkens, Henrik Gevers, Sebastian Wollschlaeger, Joachim Baeumer, Marcus Xie, Ya-Hong Niu, Gang Schroeder, Thomas |
Stichwörter: | CARBON-DIOXIDE; CEO2; Crystal structure; Crystallography; GROWTH; Materials Science; Materials Science, Multidisciplinary; METHANE; Molecular beam epitaxy; OXIDATION; OXIDE; Oxides; OXYGEN; Physics; Physics, Applied; PRASEODYMIUM SESQUIOXIDE FILMS; Rare-earth compounds; REDUCTION; X-ray diffraction; XPS | Erscheinungsdatum: | 2012 | Herausgeber: | ELSEVIER | Journal: | JOURNAL OF CRYSTAL GROWTH | Volumen: | 355 | Ausgabe: | 1 | Startseite: | 159 | Seitenende: | 165 | Zusammenfassung: | Epitaxial oxide thin film layers are of interest for model catalytic studies. We report the growth of Ce1 - xPrxO2 - delta mixed oxide layers of different stoichiometries (x = 0-1) and oxygen deficiency (delta >0) on Si(111) by co-evaporating molecular beam epitaxy. The main objective is to identify the crystal phases and to investigate the correlation between compositions and crystal structures. X-ray photoemission spectroscopy was performed to quantify the stoichiometries. An extensive laboratory and synchrotron based X-ray diffraction analysis was carried out to determine the vertical and lateral lattice orientations and the strain status of the layers. The study revealed that single crystalline Ce1 - xPrxO2 - delta/Si(111) heterostructures can be epitaxially grown on Si(111) for model catalytic studies. In addition to the structure-stoichiometry relationship typical to mixed oxide bulk powders, we identified a hexagonal mixed Ce-Pr oxide thin film phase not yet reported in bulk studies. (C) 2012 Elsevier B.V. All rights reserved. |
ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2012.06.050 |
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geprüft am 19.05.2024