Co 3d-level position in ZnS : Co semiconductors

DC FieldValueLanguage
dc.contributor.authorGalakhov, VR
dc.contributor.authorSurkova, TP
dc.contributor.authorYablonskikh, MV
dc.contributor.authorSokolov, AV
dc.contributor.authorKurmaev, EZ
dc.contributor.authorGridneva, L
dc.contributor.authorBartkowski, S
dc.contributor.authorNeumann, M
dc.contributor.authorNordgren, J
dc.contributor.authorLopez-Rivera, SA
dc.date.accessioned2021-12-23T16:21:54Z-
dc.date.available2021-12-23T16:21:54Z-
dc.date.issued2003
dc.identifier.issn10980121
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/14070-
dc.description.abstractExperimental studies of x-ray photoelectron and Co Lalpha x-ray emission spectra of the ZnS:Co semiconductor were carried out. It was established that Co ions are present in isovalent Co2+ configuration and that the Co 3d impurity states are localized above the top of the valence band by 1.0 /- 0.2 eV.
dc.language.isoen
dc.publisherAMERICAN PHYSICAL SOC
dc.relation.ispartofPHYSICAL REVIEW B
dc.subjectELECTRONIC-STRUCTURE
dc.subjectENERGY-LEVELS
dc.subjectMaterials Science
dc.subjectMaterials Science, Multidisciplinary
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectPhysics, Condensed Matter
dc.subjectSPECTROSCOPY
dc.subjectTRANSITION-METAL IMPURITIES
dc.subjectVALENCE BAND
dc.titleCo 3d-level position in ZnS : Co semiconductors
dc.typejournal article
dc.identifier.doi10.1103/PhysRevB.68.033204
dc.identifier.isiISI:000185229600010
dc.description.volume68
dc.description.issue3
dc.contributor.orcid0000-0002-1642-7362
dc.contributor.orcid0000-0003-4625-4930
dc.contributor.orcid0000-0002-5332-272X
dc.contributor.orcid0000-0002-6252-8914
dc.contributor.researcheridJ-6030-2013
dc.contributor.researcheridJ-4254-2013
dc.contributor.researcheridK-8560-2013
dc.contributor.researcheridJ-9376-2013
dc.publisher.placeONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
dcterms.isPartOf.abbreviationPhys. Rev. B
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