Structure and stability of cub-Pr2O3 films on Si(111) under post deposition annealing conditions

DC FieldValueLanguage
dc.contributor.authorGevers, S.
dc.contributor.authorWeisemoeller, T.
dc.contributor.authorZimmermann, B.
dc.contributor.authorDeiter, C.
dc.contributor.authorWollschläger, J.
dc.date.accessioned2021-12-23T16:29:03Z-
dc.date.available2021-12-23T16:29:03Z-
dc.date.issued2010
dc.identifier.issn18626351
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/16035-
dc.descriptionConference of 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12 ; Conference Date: 5 July 2009 Through 10 July 2009; Conference Code:80926
dc.description.abstractUltra thin heteroepitaxial Pr2O3 films on Si(111) were characterized by X-ray diffraction and X-ray reflectometry to determine the film and interface structure. These results exhibit two oxide phases within the praseodymia film after preparation which can be assigned to different oxygen stoichiometries. After post deposition annealing of the films at different temperatures up to 600 °C the surface was studied by spot profile analysis low energy electron diffraction, with regard to the stability of the film surface. The results show that terraces with mono-atomic step heights and mosaics can be found at the film surfaces after annealing at 300 °C. Higher annealing temperatures do not cause further changes of structure and morphology except of a slight increase of the mosaic spread due to lateral strain effects within the oxide film. These results indicate that the films are stable at temperatures as high as 600 °C. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipAnfatec Instruments AG; BESTEC GmbH; Carl Zeiss AG; Deutsche Forschungsgemeinschaft (DFG); Deutsche Vakuumgesellschaft e.V./German Vacuum Society (DVG e.V.)
dc.language.isoen
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physics
dc.subjectAnnealing temperatures
dc.subjectAtomic step
dc.subjectFilm surfaces
dc.subjectHeteroepitaxial
dc.subjectInterface structures
dc.subjectLateral strain
dc.subjectMosaic spread
dc.subjectOxide phasis
dc.subjectOxygen stoichiometry
dc.subjectPost deposition annealing
dc.subjectSi (1 1 1)
dc.subjectSpot profile analysis
dc.subjectStructure and morphology
dc.subjectUltra-thin
dc.subjectX-ray reflectometry, Annealing
dc.subjectElectron diffraction
dc.subjectNanoscience
dc.subjectOxide films
dc.subjectOxygen
dc.subjectSoil conservation
dc.subjectStoichiometry
dc.subjectX ray diffraction, Film preparation
dc.titleStructure and stability of cub-Pr2O3 films on Si(111) under post deposition annealing conditions
dc.typeconference paper
dc.identifier.doi10.1002/pssc.200982406
dc.identifier.scopus2-s2.0-77954339921
dc.identifier.urlhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-77954339921&doi=10.1002%2fpssc.200982406&partnerID=40&md5=b933a72c613c410a4cdab8b6b741cca7
dc.description.volume7
dc.description.issue2
dc.description.startpage292
dc.description.endpage295
dc.publisher.placeWeimar
dcterms.isPartOf.abbreviationPhys. Status Solidi C Curr. Top. Solid State Phys.
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.orcid0000-0002-3043-3718-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidWoJo788-
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