Erratum: Epitaxial growth of Bi(111) on Si(001) (e-Journal of Surface Science and Nanotechnology (2009) 7 (441-447))

Autor(en): Jnawali, G.
Hattab, H.
Bobisch, C.A.
Bernhart, A.
Krenzer, B.
Zubkov, E.
Deiter, C.
Weisemoeller, T.
Bertram, F. 
Wollschläger, J. 
Möller, R.
Horn-Von Hoegen, M.
Stichwörter: Bismuth; Dislocation; Heteroepitaxy; Low-energy electron diffraction (LEED); Scanning tunneling microscopy (STM); X-ray diffraction; X-ray reflectivity
Erscheinungsdatum: 2009
Herausgeber: The Japan Society of Vacuum and Surface Science
Journal: e-Journal of Surface Science and Nanotechnology
Volumen: 7
Startseite: 795
ISSN: 13480391
DOI: 10.1380/ejssnt.2009.795
Externe URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-77951791079&doi=10.1380%2fejssnt.2009.795&partnerID=40&md5=cc0a266faf584c82aaeb74e2872b7c49

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