Epitaxial growth of Bi(111) on Si(001)

DC FieldValueLanguage
dc.contributor.authorJnawali, G.
dc.contributor.authorHattab, H.
dc.contributor.authorBobisch, C.A.
dc.contributor.authorBernhart, A.
dc.contributor.authorZubkov, E.
dc.contributor.authorDeiter, C.
dc.contributor.authorWeisemoeller, T.
dc.contributor.authorBertram, F.
dc.contributor.authorWollschl̈ager, J.
dc.contributor.authorM̈oller, R.
dc.contributor.authorHoegen, M.H.-V.
dc.date.accessioned2021-12-23T16:29:32Z-
dc.date.available2021-12-23T16:29:32Z-
dc.date.issued2009
dc.identifier.issn13480391
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/16241-
dc.description.abstractDespite the large lattice misfit and different lattice symmetry, it is possible to grow smooth and almost defect-free bismuth (Bi) films on a Si(001) substrate. High resolution low-energy electron diffraction measurements have confirmed that the (111) orientation is the preferred direction of the growth. However, at low temperature and low coverage regime, rotationally disordered crystallites of (110) orientation are also observed. After the formation of a continuous layer at 5.6 bilayer (2.2 nm), the growth occurs in a bilayer-by-bilayer fashion at 150K. The remaining lattice mismatch of 2.3 % is accommodated by a periodic array of interfacial misfit dislocations, which gives rise to a periodic surface height undulation with sub-ångström amplitude. Additional growth to the desired thickness caps the height undulation resulting in an atomically smooth surface (terrace size >100 nm). The Bi(111) film is relaxed to bulk lattice constant and shows excellent crystalline quality with an abrupt interface to the Si substrate. © 2009 The Surface Science Society of Japan.
dc.language.isoen
dc.publisherThe Japan Society of Vacuum and Surface Science
dc.relation.ispartofe-Journal of Surface Science and Nanotechnology
dc.subjectBismuth
dc.subjectContinuous layers
dc.subjectCrystalline quality
dc.subjectDislocation
dc.subjectDislocations (crystals)
dc.subjectDisordered crystallites
dc.subjectElectron diffraction
dc.subjectElectrons
dc.subjectHeteroepi-taxy
dc.subjectInterfaces (materials)
dc.subjectInterfacial misfit dislocations
dc.subjectLow energy electron diffraction
dc.subjectLow-energy electron diffraction (LEED)
dc.subjectPeriodic surfaces
dc.subjectScanning tunneling microscopy
dc.subjectScanning tunneling microscopy (STM)
dc.subjectSi (001) substrate
dc.subjectSubstrates
dc.subjectTemperature
dc.subjectX ray diffraction, Atomically smooth surface
dc.subjectX ray reflectivity, Lattice mismatch
dc.subjectX-ray diffraction
dc.subjectX-ray reflectivity
dc.titleEpitaxial growth of Bi(111) on Si(001)
dc.typeconference paper
dc.identifier.doi10.1380/ejssnt.2009.441
dc.identifier.scopus2-s2.0-68849087982
dc.identifier.urlhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-68849087982&doi=10.1380%2fejssnt.2009.441&partnerID=40&md5=e28e2c3199e6041bd706ea2b3c62760d
dc.description.volume7
dc.description.startpage441
dc.description.endpage447
dcterms.isPartOf.abbreviatione-J. Surf. Sci. Nanotechnol.
crisitem.author.deptUniversität Osnabrück-
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.orcid0000-0001-9002-4118-
crisitem.author.orcid0000-0002-3043-3718-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidBeFl001-
crisitem.author.netidWoJo788-
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