RHEED STRUCTURE-ANALYSIS OF THE GAAS(001)2X4 SURFACE FOR THE AZIMUTH[110] AND AZIMUTH[010]

Autor(en): WITTE, M
MEYEREHMSEN, G
Stichwörter: Chemistry; Chemistry, Physical; DIFFRACTION; ELECTRON-SOLID INTERACTIONS, SCATTERING, DIFFRACTION; GALLIUM ARSENIDE; LOW INDEX SINGLE CRYSTAL SURFACES; PART; Physics; Physics, Condensed Matter; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); SURFACE RELAXATION AND RECONSTRUCTION; TRANSITION
Erscheinungsdatum: 1995
Herausgeber: ELSEVIER SCIENCE BV
Journal: SURFACE SCIENCE
Volumen: 326
Ausgabe: 1-2
Startseite: L449-L454
Zusammenfassung: 
Dynamical RHEED computations using the reflectivity-matrix method are applied to analyse RHEED rocking curve data in the azimuths [110] and [010] from the MBE-grown As-rich GaAs(001)2 x 4 surface. The assumed surface model based on the (2 x 4) missing-row structure permits relaxations in three surface layers. The corresponding structure parameters and the inner potential are fitted to the experimental data sets using the Marquardt-algorithm In order to consider the small peaks present in the experimental curves adequately within the fit special weighting factors are introduced in the distance measure between theory and experiment. The good agreement between calculated and measured rocking curves obtained in the two fits and the generally sensible values for the fitted parameters show, that RHEED analyses are possible even for relatively complicated surface structures. The evaluated RHEED intensities allow in particular to determine the dimer bond length for which a mean value of 2.48 /- 0.2 Angstrom is found. Furthermore the analysis indicates a large rumpling of the third layer.
ISSN: 00396028
DOI: 10.1016/0039-6028(95)00030-5

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