CHARACTERIZATION OF SHALLOW DONOR-DOPED SILICON MOLECULAR-BEAM EPITAXIAL LAYERS BY ELECTRON-SPIN RESONANCE

Autor(en): DIRKSMEYER, J
SCHIRMER, OF
Stichwörter: Materials Science; Materials Science, Coatings & Films; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter
Erscheinungsdatum: 1990
Herausgeber: ELSEVIER SCIENCE SA LAUSANNE
Journal: THIN SOLID FILMS
Volumen: 184
Startseite: 55
Seitenende: 60
Beschreibung: 
3RD INTERNATIONAL SYMP OF THE 1989 CONF OF THE EUROPEAN MATERIALS RESEARCH SOC : SILICON MOLECULAR BEAM EPITAXY, STRASBOURG, FRANCE, MAY 30-JUN 02, 1989
ISSN: 00406090
DOI: 10.1016/0040-6090(90)90397-V

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