Relativistic full-potential photoemission for GaAs(110)

Autor(en): Fluchtmann, M
der Kellen, SB
Braun, J
Borstel, G
Stichwörter: ACTIVATED GALLIUM-ARSENIDE; angle-resolved photoemission; BAND-STRUCTURE; BARRIER; CELL POTENTIALS; Chemistry; Chemistry, Physical; full-potential Green's function methods; GAAS; MULTIPLE-SCATTERING THEORY; Physics; Physics, Condensed Matter; semiconductor surfaces; SPACE-FILLING POTENTIALS; SPIN-POLARIZED ELECTRONS; SURFACE; SYSTEMS
Erscheinungsdatum: 1999
Herausgeber: ELSEVIER SCIENCE BV
Journal: SURFACE SCIENCE
Volumen: 432
Ausgabe: 3
Startseite: 291
Seitenende: 296
Zusammenfassung: 
Relativistic full-potential photoemission theory is a straightforward generalization of the original well-established one-step model. This, so far, most elaborated version of the theory has been applied to photocurrent calculations for the GaAs(110) surface. Here we present angle-resolved ultraviolet photoemission intensities calculated in normal emission for a range of different excitation energies. The investigation is based on a space-filling cell potential, which has been determined self-consistently from a relativistic full-potential KKR bandstructure calculation. We compare our calculated photoemission spectra with muffin-tin results as well as with corresponding experimental data. From this analysis we obtain an improved agreement between experiment and theory, especially in the relative intensities occurring in the different photoemission spectra. (C) 1999 Elsevier Science B.V. All rights reserved.
ISSN: 00396028
DOI: 10.1016/S0039-6028(99)00606-8

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