SPIN-POLARIZED PHOTOEMISSION CALCULATIONS FOR SEMICONDUCTOR COMPOUNDS - GAAS(110)

Autor(en): BRAUN, J
BORSTEL, G
Stichwörter: ACTIVATED GALLIUM-ARSENIDE; BREMSSTRAHLUNG; Chemistry; Chemistry, Physical; ELECTRONIC-STRUCTURE; FERROMAGNETS; GAAS; Physics; Physics, Condensed Matter; RELATIVISTIC THEORY; SOLIDS
Erscheinungsdatum: 1994
Herausgeber: ELSEVIER SCIENCE BV
Journal: SURFACE SCIENCE
Volumen: 307
Ausgabe: B
Startseite: 1118
Seitenende: 1120
Zusammenfassung: 
A fully dynamical one-step theory of photoemission for several atoms per unit cell is applied to GaAs. The theory is a relativistic generalization of the original work due to Pendry and allows for calculating theoretical ultraviolet photoemission and bremsstrahlung isochromat spectra from pure elemental solids and compounds. Here we present the calculated intensity and spin-polarization of photoelectrons excited by circular polarized radiation from the GaAs(110) surface.
Beschreibung: 
13th European Conference on Surface Science (ECOSS-13), UNIV WARWICK, ARTS CTR, WARWICK, ENGLAND, AUG 30-SEP 04, 1993
ISSN: 00396028
DOI: 10.1016/0039-6028(94)91550-4

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