SPIN-POLARIZED PHOTOEMISSION CALCULATIONS FOR SEMICONDUCTOR COMPOUNDS - GAAS(110)
| Autor(en): | BRAUN, J BORSTEL, G |
Stichwörter: | ACTIVATED GALLIUM-ARSENIDE; BREMSSTRAHLUNG; Chemistry; Chemistry, Physical; ELECTRONIC-STRUCTURE; FERROMAGNETS; GAAS; Physics; Physics, Condensed Matter; RELATIVISTIC THEORY; SOLIDS | Erscheinungsdatum: | 1994 | Herausgeber: | ELSEVIER SCIENCE BV | Enthalten in: | SURFACE SCIENCE | Band: | 307 | Ausgabe: | B | Startseite: | 1118 | Seitenende: | 1120 | Beschreibung: | 13th European Conference on Surface Science (ECOSS-13), UNIV WARWICK, ARTS CTR, WARWICK, ENGLAND, AUG 30-SEP 04, 1993 |
ISSN: | 00396028 | DOI: | 10.1016/0039-6028(94)91550-4 |
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