Morphological classification and quantitative analysis of etch pits

Autor(en): Motzer, C.
Reichling, M. 
Stichwörter: CAF2; CAF2(111); CALCIUM-FLUORIDE; DISLOCATIONS; DISTRIBUTIONS; EVOLUTION; GENERATION; IRRADIATION; Physics; Physics, Applied; SINGLE-CRYSTALS; SURFACE
Erscheinungsdatum: 2010
Herausgeber: AMER INST PHYSICS
Journal: JOURNAL OF APPLIED PHYSICS
Volumen: 108
Ausgabe: 11
Zusammenfassung: 
Etch pits created by hydrochloric and phosphoric acid on cleaved CaF(2)(111) are investigated by scanning force microscopy (SFM). A geometric and dimensional analysis of the etch pits reveals two distinctly different types. Type-I etch pits evolve at dislocation defects, are pointed and their size and eccentricity is related to the angle between the dislocation and the surface. Type-II etch pits result from defects below the surface, are flat-bottomed for longer etching times and exhibit a characteristic ratio of depth and edge length depending on the type of etchant. An analysis of etch pit morphology allows an identification of the origin of an etch pit and a characterization of the associated defect structure. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3510535]
ISSN: 00218979
DOI: 10.1063/1.3510535

Show full item record

Google ScholarTM

Check

Altmetric