On the coexistence of localized and extended acceptor states in high gap semiconductors

Autor(en): Schirmer, O. F.
Stichwörter: defect levels; Engineering; Engineering, Electrical & Electronic; hole small polarons; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Condensed Matter; semiconductors
Erscheinungsdatum: 2015
Herausgeber: IOP PUBLISHING LTD
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volumen: 30
Ausgabe: 2, SI
Zusammenfassung: 
Holes introduced into high gap materials by acceptor doping are often self-localized at anion sites as small polarons bound to the doping elements. The related lattice distortion lowers the hole energy; the hole levels thus tend to be deep. Electronic structure calculations of small polarons have identified, for some dopings, that such localized states can coexist with extended ones that result from the same doping. Using a scaling formalism, proposed by Emin and Holstein, it is shown that this appears to be a general phenomenon if the polaron-forming shortrange hole-lattice coupling is taken into account.
ISSN: 02681242
DOI: 10.1088/0268-1242/30/2/024009

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