Dielectric properties of I-III-VI2-type chalcopyrite semiconductors

Autor(en): Xue, D
Betzler, K
Hesse, H
Stichwörter: BOND-CHARGE CALCULATION; CHEMICAL-BOND; CUGAS2; CUINS2; ELECTRONIC-STRUCTURE; IONICITIES; Materials Science; Materials Science, Multidisciplinary; MICROHARDNESS; NONLINEAR-OPTICAL-PROPERTIES; Physics; Physics, Applied; Physics, Condensed Matter; SE; SUSCEPTIBILITIES
Erscheinungsdatum: 2000
Herausgeber: AMER PHYSICAL SOC
Journal: PHYSICAL REVIEW B
Volumen: 62
Ausgabe: 20
Startseite: 13546
Seitenende: 13551
Zusammenfassung: 
Dielectric properties of I-III-VI2-type ternary chalcopyrite semiconductors, including linear and second order nonlinear optical susceptibilities at 10.6 mum, have been quantitatively studied from the chemical bond viewpoint. Contributions from each type of constituent chemical bond, i.e., I - VI and III - VI bonds, to the total linear and nonlinear optical properties of these compounds at 10.6 mum have been theoretically determined. The chemical bond method quantitatively expresses the trends in the dielectric properties of these compounds, which is helpful for carrying out modeling of their properties.
ISSN: 24699950
DOI: 10.1103/PhysRevB.62.13546

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