Amorphous Fe-Si and Fe-Ge nanostructures quantitatively analyzed by x-ray-photoelectron spectroscopy

Autor(en): Schleberger, M
Walser, P
Hunziker, M
Landolt, M
Stichwörter: ELECTRON-SPECTROSCOPY; FE/SI MULTILAYERS; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; SILICON
Erscheinungsdatum: 1999
Volumen: 60
Ausgabe: 20
Startseite: 14360
Seitenende: 14365
The subject of this paper is an x-ray-photoelectron spectroscopy investigation of amorphous Fe-Si and Fe-Ge nanostructures that have attracted interest because of their magnetic coupling properties. To this end we deposit Fe onto clean, amorphous Si and Ge substrates at room temperature and at 40 K, respectively. We take spectra of the Fe3p, Fe2p, and Si2p core Levels to determine possible chemical shifts. The results indicate a charge transfer from the Fe to the Si and Ge atoms at room temperature as well as at 40 K. Additionally, we record wide range spectra of the SiKLL, GeLMM, and the Fe2p peaks as well as spectra of Fe-Si, and Fe-Ge compounds, respectively. Analyzing the inelastic background of the peaks we quantitatively determine the nanostructure of the deposits. We can exclude the formation of sharp interfaces. Instead, we find evidence for the formation of an Fe-Si or Fe-Ge interface compound with a homogeneous composition. For magnetically investigated low-temperature prepared Fe/Si/Fe trilayers we show that the spacer layer is a pure semiconductor with a thickness that is reduced compared to the nominal value. [S0163-1829(99)02443-1].
ISSN: 10980121
DOI: 10.1103/PhysRevB.60.14360

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