OPTICAL CHANNEL WAVE-GUIDES PRODUCED WITH HIGH-DOSE TI+ IMPLANTATION

Autor(en): NIEHOF, A
RENNER, S
BUCHAL, C
HEILAND, W
Stichwörter: Instruments & Instrumentation; ION-IMPLANTATION; LINBO3; MODULATORS; Nuclear Science & Technology; Physics; Physics, Atomic, Molecular & Chemical; Physics, Nuclear; WAVE-GUIDES
Erscheinungsdatum: 1991
Herausgeber: ELSEVIER SCIENCE BV
Journal: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volumen: 59
Ausgabe: 2
Startseite: 1355
Seitenende: 1357
Zusammenfassung: 
High-dose ion implantation was used to produce a channel waveguide waveguide in LiNbO3. The Ti+ ions have an energy of 200 keV. The implanted dose was 2.5 x 10(17) cm-2. The mask for the implantation was formed with photoresist only.
Beschreibung: 
7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ), KNOXVILLE, TN, SEP 09-14, 1990
ISSN: 0168583X
DOI: 10.1016/0168-583X(91)95829-3

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