Investigation of chemical and grain boundary effects in highly ordered Sr2FeMoO6:: XPS and Mossbauer studies

DC ElementWertSprache
dc.contributor.authorRaekers, M
dc.contributor.authorKuepper, K
dc.contributor.authorHesse, H
dc.contributor.authorBalasz, I
dc.contributor.authorDeac, IG
dc.contributor.authorConstantinescu, S
dc.contributor.authorBurzo, E
dc.contributor.authorValeanu, M
dc.contributor.authorNeumann, M
dc.date.accessioned2024-01-04T10:37:20Z-
dc.date.available2024-01-04T10:37:20Z-
dc.date.issued2006
dc.identifier.issn1454-4164
dc.identifier.urihttp://osnascholar.ub.uni-osnabrueck.de/handle/unios/73275-
dc.description4th International Conference on New Research Trends in Materials Science (ARM-4), Constanta, ROMANIA, SEP 04-06, 2005
dc.description.abstractWe have studied the oxidation states of Fe and Mo and the presence of grain boundaries in the magneto resistive (MR) compounds Sr2FeMoO6 by means of x-ray photoelectron spectroscopy (XPS), Mossbauer spectroscopy and electrical resistivity measurements. XPS of the Mo 3d and Fe 3s core levels is indicating a mixed valence state involving around 30% Fe3+ - Mo5+ and 70% Fe2+ - Mo6+ states. Mossbauer studies confirm the presence of a valence fluctuation state and an essential amount of grain boundaries in the present Sr2FeMoO6 crystals. Resistivities and magnetoresistance studies evidenced strong grain boundary effects.
dc.language.isoen
dc.publisherNATL INST OPTOELECTRONICS
dc.relation.ispartofJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
dc.subjectdouble perovskite
dc.subjectDOUBLE-PEROVSKITE
dc.subjectelectrical resistivity
dc.subjectELECTRONIC-STRUCTURE
dc.subjectMAGNETIZATION
dc.subjectmagnetoresistance
dc.subjectMaterials Science
dc.subjectMaterials Science, Multidisciplinary
dc.subjectMossbauer spectroscopy
dc.subjectOptics
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectSr2FeMoO6
dc.subjectSTATE
dc.subjectX-ray photoelectron spectroscopy
dc.titleInvestigation of chemical and grain boundary effects in highly ordered Sr<sub>2</sub>FeMoO<sub>6</sub>:: XPS and Mossbauer studies
dc.typeconference paper
dc.identifier.isiISI:000237001000006
dc.description.volume8
dc.description.issue2
dc.description.startpage455
dc.description.endpage460
dc.contributor.orcidhttps://orcid.org/0000-0001-6394-3549
dc.contributor.orcidhttps://orcid.org/0000-0002-7778-9113
dc.contributor.orcidhttps://orcid.org/0000-0002-7778-9113
dc.contributor.researcheridB-4728-2012
dc.contributor.researcheridH-1707-2016
dc.contributor.researcheridK-2460-2019
dc.contributor.researcheridG-1397-2016
dc.identifier.eissn1841-7132
dc.publisher.place1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA
dcterms.isPartOf.abbreviationJ. Optoelectron. Adv. Mater.
local.import.remainsaffiliations : University Osnabruck; Babes Bolyai University from Cluj; National Institute of Materials Physics - Romania; Helmholtz Association; Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
local.import.remainsweb-of-science-index : Science Citation Index Expanded (SCI-EXPANDED); Conference Proceedings Citation Index - Science (CPCI-S)
crisitem.author.deptFB 04 - Physik-
crisitem.author.deptidfb04-
crisitem.author.parentorgUniversität Osnabrück-
crisitem.author.netidKuKa120-
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