Giant magnetoresistance in RENiSb semiconductors (RE = Tb, Dy, Ho)

Autor(en): Pierre, J
Karla, I
Stichwörter: giant magnetoresistance; LOCALIZATION; magnetic semiconductors; Materials Science; Materials Science, Multidisciplinary; MIXED-VALENCE MANGANITES; Physics; Physics, Condensed Matter; RNISB COMPOUNDS; TRANSPORT; variable range hopping
Erscheinungsdatum: 2000
Herausgeber: ELSEVIER
Journal: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volumen: 217
Ausgabe: 1-3
Startseite: 74
Seitenende: 82
Zusammenfassung: 
A giant magnetoresistance is observed at low temperatures in RENiSb semiconductors, and is studied as function of held and temperature. The magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, the proportionality factor depending on the amplitude of the resistivity itself and being higher for a low carrier density. (C) 2000 Elsevier Science B.V. All rights reserved.
ISSN: 03048853
DOI: 10.1016/S0304-8853(00)00319-X

Show full item record

Google ScholarTM

Check

Altmetric