VALENCE BAND DENSITIES-OF-STATES OF TIO2(110) FROM RESONANT PHOTOEMISSION AND PHOTOELECTRON DIFFRACTION

DC FieldValueLanguage
dc.contributor.authorHEISE, R
dc.contributor.authorCOURTHS, R
dc.contributor.authorWITZEL, S
dc.date.accessioned2021-12-23T16:07:23Z-
dc.date.available2021-12-23T16:07:23Z-
dc.date.issued1992
dc.identifier.issn00381098
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/7853-
dc.description.abstractWe have performed a resonant photoemission (ResPE) and a photoelectron diffraction (XPD) study on a stoichiometric TiO2(110) crystal and have deduced Ti3d and O2p valence-band partial densities-of-states (VBPDOS) projected along the surface normal from these data. It is for the first time that both of these physically very different methods are applied to a crystal in order to extract the same set of information. Both experimental VBPDOS's show that the hybridization between O2p and Ti3d orbitals extend over the whole mainly O2p derived valence band. A comparitive discussion of the densities obtained from the two different methods and from electronic-structure calculations for bulk TiO2 and (110) surfaces is given.
dc.language.isoen
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.relation.ispartofSOLID STATE COMMUNICATIONS
dc.subjectELECTRONIC-STRUCTURE
dc.subjectEMISSION
dc.subjectHYBRIDIZATION
dc.subjectMOTION METHOD
dc.subjectPhysics
dc.subjectPhysics, Condensed Matter
dc.subjectSURFACES
dc.subjectTIO2
dc.titleVALENCE BAND DENSITIES-OF-STATES OF TIO2(110) FROM RESONANT PHOTOEMISSION AND PHOTOELECTRON DIFFRACTION
dc.typejournal article
dc.identifier.doi10.1016/0038-1098(92)90198-I
dc.identifier.isiISI:A1992JZ06000004
dc.description.volume84
dc.description.issue6
dc.description.startpage599
dc.description.endpage602
dc.publisher.placeTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND OX5 1GB
dcterms.isPartOf.abbreviationSolid State Commun.
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