Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data
Autor(en): | Rahe, Philipp Smith, Emily F. Wollschlaeger, Joachim Moriarty, Philip J. |
Stichwörter: | ELECTRONIC-STRUCTURE; EPITAXIAL-GROWTH; INITIAL GROWTH; INSULATOR; INTERFACE; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; PROBE MICROSCOPY; SCANNING-TUNNELING-MICROSCOPY; STEP NUCLEATION; SURFACE; X-RAY-SCATTERING | Erscheinungsdatum: | 2018 | Herausgeber: | AMER PHYSICAL SOC | Journal: | PHYSICAL REVIEW B | Volumen: | 97 | Ausgabe: | 12 | Zusammenfassung: | We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunneling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown at substrate temperatures between 550 and 600 degrees C on Si(111) surfaces reveal the existence of two island types that are distinguished by their edge topology, nucleation position, measured height, and inner defect structure. Our data suggest a growth model where the two island types are the result of two reaction pathways during CaF1 interface formation. A key difference between these two pathways is identified to arise from the excess species during the growth process, which can be either fluorine or silicon. Structural details as a result of this difference are identified by means of high-resolution noncontact atomic force microscopy and add insights into the growth mode of this heteroepitaxial insulator-on-semiconductor system. |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.97.125418 |
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