Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

Autor(en): Rahe, Philipp 
Smith, Emily F.
Wollschlaeger, Joachim 
Moriarty, Philip J.
Stichwörter: ELECTRONIC-STRUCTURE; EPITAXIAL-GROWTH; INITIAL GROWTH; INSULATOR; INTERFACE; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; PROBE MICROSCOPY; SCANNING-TUNNELING-MICROSCOPY; STEP NUCLEATION; SURFACE; X-RAY-SCATTERING
Erscheinungsdatum: 2018
Herausgeber: AMER PHYSICAL SOC
Journal: PHYSICAL REVIEW B
Volumen: 97
Ausgabe: 12
Zusammenfassung: 
We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunneling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown at substrate temperatures between 550 and 600 degrees C on Si(111) surfaces reveal the existence of two island types that are distinguished by their edge topology, nucleation position, measured height, and inner defect structure. Our data suggest a growth model where the two island types are the result of two reaction pathways during CaF1 interface formation. A key difference between these two pathways is identified to arise from the excess species during the growth process, which can be either fluorine or silicon. Structural details as a result of this difference are identified by means of high-resolution noncontact atomic force microscopy and add insights into the growth mode of this heteroepitaxial insulator-on-semiconductor system.
ISSN: 24699950
DOI: 10.1103/PhysRevB.97.125418

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