Scanning tunneling microscopy and ion channeling studies of thin Co films on bromine-treated Si(100) surfaces

DC FieldValueLanguage
dc.contributor.authorSekar, K
dc.contributor.authorSundaravel, B
dc.contributor.authorWilson, IH
dc.contributor.authorHeiland, W
dc.date.accessioned2021-12-23T16:08:43Z-
dc.date.available2021-12-23T16:08:43Z-
dc.date.issued2000
dc.identifier.issn01694332
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/8420-
dc.description.abstractWe report an attempt to see if one could prepare thin epitaxial silicide films on Si(100) substrates from a non-UHV technique. Growth and characterization of epitaxial cobalt silicide films has been studied. Thin films of Co (1.4-1.7 nm) are deposited at room temperature by evaporation on to bromine treated Si(100) substrate. Subsequently annealing was performed in vacuum at 440 degrees C, 570 degrees C and 680 degrees C. The morphology and the structure of the films were characterized by scanning tunneling microscopy (STM), Rutherford backscattering spectrometry (RBS) and ion channeling and scanning electron microscopy (SEM). The interface region was probed by STM through a large pinhole in the 680 degrees C annealed sample which revealed a flat region with oriented grains. Channeling measurements on the 570 degrees C and 680 degrees C annealed samples showed a reduction in the cobalt signal indicating crystalline growth of the silicide while the 440 degrees C annealed sample showed no reduction. Angular scans along various crystallographic directions for these samples showed shifts in the Co dips with respect to the substrate indicating a strained epitaxial film. Presence of strain even after island formation confirms that relief of misfit stress is not the driving force for pinhole formation and also implies that the thickness of the silicide films are within the reported critical thickness. (C) 2000 Elsevier Science B.V. All rights reserved.
dc.language.isoen
dc.publisherELSEVIER
dc.relation.ispartofAPPLIED SURFACE SCIENCE
dc.subjectChemistry
dc.subjectChemistry, Physical
dc.subjectEPITAXIAL COSI2 FILMS
dc.subjectepitaxy
dc.subjectGOLD SILICIDE
dc.subjectGROWTH
dc.subjection channeling
dc.subjectLAYERS
dc.subjectMaterials Science
dc.subjectMaterials Science, Coatings & Films
dc.subjectNI
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectPhysics, Condensed Matter
dc.subjectREGISTRATION PROBLEM
dc.subjectSI
dc.subjectSI(111)
dc.subjectsilicide
dc.subjectstrain
dc.titleScanning tunneling microscopy and ion channeling studies of thin Co films on bromine-treated Si(100) surfaces
dc.typejournal article
dc.identifier.doi10.1016/S0169-4332(99)00504-8
dc.identifier.isiISI:000086074100019
dc.description.volume156
dc.description.issue1-4
dc.description.startpage161
dc.description.endpage168
dc.identifier.eissn18735584
dc.publisher.placeRADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
dcterms.isPartOf.abbreviationAppl. Surf. Sci.
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