The effect of Gd doping on electronic properties of NiMnSb compounds

Autor(en): Grasin, R.
Rusu, C.
Dudric, R.
Mican, S.
Neumann, M.
Tetean, R.
Stichwörter: Electronic structure calculations; HALF-METALS; Heusler alloys; Materials Science; Materials Science, Multidisciplinary; Optics; PHOTOEMISSION; X-ray photoelectron spectroscopy
Erscheinungsdatum: 2012
Herausgeber: NATL INST OPTOELECTRONICS
Journal: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
Volumen: 6
Ausgabe: 1-2
Startseite: 169
Seitenende: 173
Zusammenfassung: 
The effects of gadolinium doping on the electronic properties of half-Heusler compound NiMnSb are presented. Band structure calculations show that the half-metallic properties are completely conserved if Gd atoms substitute the manganese ones. This effect is determined by the coupling between the Gd (40 spin and the Mn (3d) itinerant electron spins. The antiparallel coupling of Gd and transition metal magnetic moments was found to be more favourable. The structural and XPS analysis confirm that the gadolinium atoms occupy lattice sites.
ISSN: 18426573

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