FULL-POTENTIAL PHOTOEMISSION CALCULATIONS FOR THE SI(100) SURFACE

Autor(en): GRASS, M
BRAUN, J
BORSTEL, G
DERKELLEN, SB
Stichwörter: ANGLE-RESOLVED PHOTOEMISSION; BAND-STRUCTURE; BARRIER; ELECTRONIC-STRUCTURE; Physics; Physics, Condensed Matter; REFLECTION; SPECTRA; STATES; TRANSITIONS; TRANSMISSION
Erscheinungsdatum: 1995
Herausgeber: IOP PUBLISHING LTD
Journal: JOURNAL OF PHYSICS-CONDENSED MATTER
Volumen: 7
Ausgabe: 40
Startseite: 7775
Seitenende: 7780
Zusammenfassung: 
In this contribution, we have calculated angle-dependent photoelectron spectra from the Si(100) surface along the Gamma XWK bulk mirror plane by excitation with unpolarized He-I radiation. For this theoretical investigation the full-potential photoemission theory has been used, which is a straightforward generalization of the one-step model of photoemission in the case of anisotropic, space-filling cell potentials. The crystal potential employed for the determination of the theoretical data has been calculated self-consistently within the full-potential Korringa-Kohn-Rostoker band structure method. The comparison with the corresponding experimental data shows a very good agreement for all bulk transitions.
ISSN: 09538984
DOI: 10.1088/0953-8984/7/40/008

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