FULL-POTENTIAL PHOTOEMISSION CALCULATIONS FOR THE SI(100) SURFACE

DC FieldValueLanguage
dc.contributor.authorGRASS, M
dc.contributor.authorBRAUN, J
dc.contributor.authorBORSTEL, G
dc.contributor.authorDERKELLEN, SB
dc.date.accessioned2021-12-23T16:09:14Z-
dc.date.available2021-12-23T16:09:14Z-
dc.date.issued1995
dc.identifier.issn09538984
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/8685-
dc.description.abstractIn this contribution, we have calculated angle-dependent photoelectron spectra from the Si(100) surface along the Gamma XWK bulk mirror plane by excitation with unpolarized He-I radiation. For this theoretical investigation the full-potential photoemission theory has been used, which is a straightforward generalization of the one-step model of photoemission in the case of anisotropic, space-filling cell potentials. The crystal potential employed for the determination of the theoretical data has been calculated self-consistently within the full-potential Korringa-Kohn-Rostoker band structure method. The comparison with the corresponding experimental data shows a very good agreement for all bulk transitions.
dc.language.isoen
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofJOURNAL OF PHYSICS-CONDENSED MATTER
dc.subjectANGLE-RESOLVED PHOTOEMISSION
dc.subjectBAND-STRUCTURE
dc.subjectBARRIER
dc.subjectELECTRONIC-STRUCTURE
dc.subjectPhysics
dc.subjectPhysics, Condensed Matter
dc.subjectREFLECTION
dc.subjectSPECTRA
dc.subjectSTATES
dc.subjectTRANSITIONS
dc.subjectTRANSMISSION
dc.titleFULL-POTENTIAL PHOTOEMISSION CALCULATIONS FOR THE SI(100) SURFACE
dc.typejournal article
dc.identifier.doi10.1088/0953-8984/7/40/008
dc.identifier.isiISI:A1995RY54300008
dc.description.volume7
dc.description.issue40
dc.description.startpage7775
dc.description.endpage7780
dc.publisher.placeTECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
dcterms.isPartOf.abbreviationJ. Phys.-Condes. Matter
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