Growth and holographic characterization of nonstoichiometric sillenite-type crystals

DC FieldValueLanguage
dc.contributor.authorVogt, H
dc.contributor.authorBuse, K
dc.contributor.authorHesse, H
dc.contributor.authorKratzig, E
dc.contributor.authorGarcia, RR
dc.date.accessioned2021-12-23T16:09:21Z-
dc.date.available2021-12-23T16:09:21Z-
dc.date.issued2001
dc.identifier.issn00218979
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/8747-
dc.description.abstractWe have grown Bi12GeO20 and Bi12SiO20 single crystals from melts with different GeO2 and SiO2 contents, respectively, to investigate the influence of an intrinsic defect, the antisite defect (Bi on Ge or Si site), on the light-induced charge transport. The optical absorption and the effective trap density of the crystals increase with decreasing GeO2 and SiO2 content in the melt. Furthermore, a variation of the photoconductivity is observed. Our results can be described by a one-center model with the antisite defect Bi3+/4+ on Ge or Si site as dominant photorefractive center. (C) 2001 American Institute of Physics.
dc.language.isoen
dc.publisherAMER INST PHYSICS
dc.relation.ispartofJOURNAL OF APPLIED PHYSICS
dc.subjectABSORPTION
dc.subjectBI12GEO20 CRYSTALS
dc.subjectBI12SIO20 CRYSTALS
dc.subjectBISMUTH SILICON-OXIDE
dc.subjectDEFECT
dc.subjectMAGNETIC-RESONANCE
dc.subjectPhysics
dc.subjectPhysics, Applied
dc.subjectSTORAGE
dc.subjectTRANSPORT
dc.titleGrowth and holographic characterization of nonstoichiometric sillenite-type crystals
dc.typejournal article
dc.identifier.doi10.1063/1.1400095
dc.identifier.isiISI:000171135900005
dc.description.volume90
dc.description.issue7
dc.description.startpage3167
dc.description.endpage3173
dc.contributor.orcid0000-0002-7590-8131
dc.contributor.researcheridAAE-6623-2021
dc.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
dcterms.isPartOf.abbreviationJ. Appl. Phys.
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