BAND-MAPPING OF INP-(100) ALONG THE GAMMA-X-LINE

Abstract

We have prepared InP (100) surfaces from wafer-material by cycles of argon ion sputtering and gentle annealing. From these samples normal-emission photoelectron spectra were recorded using photons in the energy range 10 eV < h-omega < 75 eV. From the results we derive the initial-state band dispersion along the GAMMA-X-line of the 3-dimensional Brillouin zone. Our results are fully consistent with initial-state bands mapped by other authors along the GAMMA-KX-line. From the good agreement we conclude that the quality of the (100)-surfaces as used in our work is at least adequate for bulk band investigations.