BAND-MAPPING OF INP-(100) ALONG THE GAMMA-X-LINE

Autor(en): LODDERS, F
WESTHOF, J
SCHAEFER, JA
HOPFINGER, H
GOLDMANN, A
WITZEL, S
Stichwörter: GAAS; GAP; INAS; INP; INSB; PHOTOEMISSION; Physics; Physics, Condensed Matter; SURFACE
Erscheinungsdatum: 1991
Herausgeber: SPRINGER
Journal: ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER
Volumen: 83
Ausgabe: 2
Startseite: 263
Seitenende: 266
Zusammenfassung: 
We have prepared InP (100) surfaces from wafer-material by cycles of argon ion sputtering and gentle annealing. From these samples normal-emission photoelectron spectra were recorded using photons in the energy range 10 eV < h-omega < 75 eV. From the results we derive the initial-state band dispersion along the GAMMA-X-line of the 3-dimensional Brillouin zone. Our results are fully consistent with initial-state bands mapped by other authors along the GAMMA-KX-line. From the good agreement we conclude that the quality of the (100)-surfaces as used in our work is at least adequate for bulk band investigations.
ISSN: 07223277
DOI: 10.1007/BF01309427

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