Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation

Autor(en): Gevers, S.
Flege, J. I.
Kaemena, B.
Bruns, D.
Weisemoeller, T.
Falta, J.
Wollschlaeger, J.
Stichwörter: OXIDATION; Physics; Physics, Applied; PR2O3; SURFACE
Erscheinungsdatum: 2010
Herausgeber: AMER INST PHYSICS
Journal: APPLIED PHYSICS LETTERS
Volumen: 97
Ausgabe: 24
Zusammenfassung: 
Ultrathin praseodymia films have been deposited on both Cl-passivated and nonpassivated Si(111) substrates by molecular beam epitaxy. Comparative studies on the crystallinity and stoichiometry are performed by x-ray photoelectron spectroscopy, x-ray standing waves, and x-ray reflectometry. On nonpassivated Si(111) an amorphous silicate film is formed. In contrast, praseodymia deposited on Cl-passivated Si(111) form a well-ordered crystalline film with cubic-Pr(2)O(3) (bixbyite) structure. The vertical lattice constant of the praseodymia film is increased by 1.4% compared to the bulk value. Furthermore, the formation of an extended amorphous silicate interface layers is suppressed and confined to only one monolayer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525175]
ISSN: 00036951
DOI: 10.1063/1.3525175

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