Analysis of reverse current-voltage characteristics of Ti/6H-SiC Schottky diodes

Autor(en): Schroder, C
Heiland, W
Held, R
Loose, W
Stichwörter: CONTACTS; Physics; Physics, Applied
Erscheinungsdatum: 1996
Herausgeber: AMER INST PHYSICS
Journal: APPLIED PHYSICS LETTERS
Volumen: 68
Ausgabe: 14
Startseite: 1957
Seitenende: 1959
Zusammenfassung: 
Investigations on electrical properties of as fabricated and annealed titanium 6H-SiC Schottky contacts were performed by current-voltage (I-V) and capacitance-voltage (C-V) measurements in a temperature range of 100-460 K. Both the Schottky barrier height (SBH) Phi(b) and the ideality factor n were found to depend on temperature and voltage. In addition, a systematic discrepancy between barrier heights extracted from I-V and C-V curves was observed. An explanation is given for the high leakage currents which are still a general problem of SiC Schottky diodes. On the basis of two analytical models we are able to describe this behavior assuming the formation of a very thin inhomogeneous interfacial layer between metal and semiconductor. (C) 1996 American Institute of Physics.
ISSN: 00036951
DOI: 10.1063/1.115638

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