Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Autor(en): Marnitz, L.
Rott, K.
Niehoerster, S.
Klewe, C.
Meier, D.
Fabretti, S.
Witziok, M.
Krampf, A.
Kuschel, O.
Schemme, T. 
Kuepper, K.
Wollschlaeger, J.
Thomas, A.
Reiss, G.
Kuschel, T. 
Stichwörter: ELECTRODE; EPITAXY; FABRICATION; FE3O4; MAGNESIUM-OXIDE 001; Materials Science; Materials Science, Multidisciplinary; Nanoscience & Nanotechnology; Physics; Physics, Applied; ROOM-TEMPERATURE; Science & Technology - Other Topics; SURFACE-STRUCTURE; THIN-FILMS
Erscheinungsdatum: 2015
Herausgeber: AMER INST PHYSICS
Journal: AIP ADVANCES
Volumen: 5
Ausgabe: 4
Zusammenfassung: 
Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585 degrees C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200 degrees C and 280 degrees C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200 degrees C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
ISSN: 21583226
DOI: 10.1063/1.4917018

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