Space-charge waves in silicon carbide

Autor(en): Petrov, MP
Bryksin, VV
Lebedev, AA
Lemmer, M
Imlau, M 
Stichwörter: CRYSTALS; Physics; Physics, Applied; RECTIFICATION; SEMICONDUCTORS; STEADY-STATE
Erscheinungsdatum: 2005
Herausgeber: AMER INST PHYSICS
Journal: JOURNAL OF APPLIED PHYSICS
Volumen: 98
Ausgabe: 8
Zusammenfassung: 
Space-charge waves (trap recharging waves) and the effect of spatial rectification of space-charge waves have been investigated in single crystals of 4H-SiC polytype. The relevant experimental dependencies have been found to be in quite good quantitative agreement with the theory of space-charge waves. The following parameters of the samples studied were determined: mu tau=(7.4 /- 0.8)x10(-7) cm(2)/V, tau(M)=(5.3 /- 0.6)x10(-4) s, and N-eff=(5 /- 1)x10(13) cm(-3). (c) 2005 American Institute of Physics.
ISSN: 00218979
DOI: 10.1063/1.2112180

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