THE INFLUENCE OF DEFECTS ON THE NI-2P AND O-1S XPS OF NIO

Autor(en): UHLENBROCK, S
SCHARFSCHWERDT, C
NEUMANN, M
ILLING, G
FREUND, HJ
Stichwörter: BOMBARDMENT; OXIDE SYSTEMS; OXYGEN; PHOTOEMISSION; Physics; Physics, Condensed Matter; SURFACES
Erscheinungsdatum: 1992
Herausgeber: IOP PUBLISHING LTD
Journal: JOURNAL OF PHYSICS-CONDENSED MATTER
Volumen: 4
Ausgabe: 40
Startseite: 7973
Seitenende: 7978
Zusammenfassung: 
The Ni 2p and O 1s XPS of NiO single crystals were measured using monochromatic Al Kalpha radiation. Different treatments of the crystals allow us to give a description of the influence of defects on these spectra. The Ni 2P3/2 spectrum of in-situ-cleaved NiO exibits clearly visible features at 854.1 eV, 855.6 eV and 861 eV. The intensity ratio changes after ion bombardment and an additional peak at 852.2 eV appears. Apart from a slight increase in linewidth the O 1s spectrum remains unchanged. The O 1s spectrum from an in-situ-cleaved NiO single crystal exhibits only a single peak at 529.4 eV which can be fitted by a Gaussian line profile. Further measurements allow us to attribute the well known O 1s satellite at 531.2 eV to emission from oxygen-containing species adsorbed at defects.
ISSN: 09538984
DOI: 10.1088/0953-8984/4/40/009

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