UNOCCUPIED ELECTRONIC STATES AND SURFACE BARRIERS AT CU SURFACES

DC FieldValueLanguage
dc.contributor.authorGRASS, M
dc.contributor.authorBRAUN, J
dc.contributor.authorBORSTEL, G
dc.contributor.authorSCHNEIDER, R
dc.contributor.authorDURR, H
dc.contributor.authorFAUSTER, T
dc.contributor.authorDOSE, V
dc.date.accessioned2021-12-23T16:11:51Z-
dc.date.available2021-12-23T16:11:51Z-
dc.date.issued1993
dc.identifier.issn09538984
dc.identifier.urihttps://osnascholar.ub.uni-osnabrueck.de/handle/unios/9920-
dc.description.abstractThe surface potential barrier shape of the low-index faces of copper was determined by an analysis of inverse photoemission and two-photon photoemission measurements making use of the one-step model of photoemission. The barrier potentials obtained in this way allow for a consistent description of the energetic positions and effective masses of all known surface states for the various faces. It is found, in agreement with previous theoretical predictions, that the most open surface, Cu(110). exhibits the strongest saturation of the image potential with an image plane lying nearest to the topmost atomic layer and with the weakest image force outside the crystal. A comparison with theoretical slab calculations shows that in these calculations the position of the image plane is always significantly further outside the crystal than derived in the present study. Dynamical effects in the effective potential are found to be negligible for electronic states up to 6 eV above the Fermi level E(F), but are probably responsible for systematic discrepancies between theory and experiment for unoccupied bulk states in the energy range 10-15 eV above E(F).
dc.language.isoen
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofJOURNAL OF PHYSICS-CONDENSED MATTER
dc.subject2-PHOTON PHOTOEMISSION
dc.subjectANGLE-RESOLVED PHOTOEMISSION
dc.subjectCU(001)
dc.subjectCU(100)
dc.subjectCU(111)
dc.subjectDIFFRACTION FINE-STRUCTURE
dc.subjectENERGY
dc.subjectIMAGE-POTENTIAL STATES
dc.subjectINVERSE PHOTOEMISSION
dc.subjectMETAL-SURFACES
dc.subjectPhysics
dc.subjectPhysics, Condensed Matter
dc.titleUNOCCUPIED ELECTRONIC STATES AND SURFACE BARRIERS AT CU SURFACES
dc.typejournal article
dc.identifier.doi10.1088/0953-8984/5/5/011
dc.identifier.isiISI:A1993KL07000011
dc.description.volume5
dc.description.issue5
dc.description.startpage599
dc.description.endpage614
dc.contributor.orcid0000-0001-8049-2866
dc.contributor.researcheridF-6205-2012
dc.contributor.researcheridB-3096-2012
dc.publisher.placeTECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
dcterms.isPartOf.abbreviationJ. Phys.-Condes. Matter
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