XPS AND SIMS/SNMS MEASUREMENTS ON THIN METAL-OXIDE LAYERS

Autor(en): ALBERS, T
NEUMANN, M
LIPINSKY, D
BENNINGHOVEN, A
Stichwörter: Chemistry; Chemistry, Physical; Materials Science; Materials Science, Coatings & Films; Physics; Physics, Applied; Physics, Condensed Matter; SECONDARY ION
Erscheinungsdatum: 1993
Herausgeber: ELSEVIER SCIENCE BV
Journal: APPLIED SURFACE SCIENCE
Volumen: 70-1
Ausgabe: A
Startseite: 49
Seitenende: 52
Zusammenfassung: 
Binary multilayers of TiO2/SiO2 and Si02/ZrO2 typically used as optical filters have been investigated by XPS, SIMS and SNMS. Depending on the composition of the layers, various SIMS signals are enhanced in the interface region of the depth profiles. Charging effects at the interfaces can be ruled out as an explanation for this behaviour by comparing SIMS with SNMS and XPS data. However, the chemical state of the elements, which was monitored by XPS as a function of depth, plays the key role in the observed variations.
Beschreibung: 
SESSION ON THE APPLICATIONS OF SURFACE SCIENCE AND ELECTRONIC MATERIALS, AT THE 12TH INTERNATIONAL VACUUM CONGRESS ( IVC-12 ), THE HAGUE, NETHERLANDS, OCT 12-16, 1992
ISSN: 01694332
DOI: 10.1016/0169-4332(93)90396-S

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