Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)

Autor(en): Flege, Jan Ingo
Kaemena, Bjoern
Gevers, Sebastian
Bertram, Florian 
Wilkens, Torsten
Bruns, Daniel
Baetjer, Jan
Schmidt, Thomas
Wollschlaeger, Joachim 
Falta, Jens
Stichwörter: CEO2 LAYERS; CL; CRYSTAL-STRUCTURE; DESORPTION; DIELECTRICS; Materials Science; Materials Science, Multidisciplinary; PHOTOELECTRON-SPECTROSCOPY; Physics; Physics, Applied; Physics, Condensed Matter; STABILITY; SURFACES; TEMPERATURE EPITAXIAL-GROWTH; THIN-FILMS
Erscheinungsdatum: 2011
Herausgeber: AMER PHYSICAL SOC
Journal: PHYSICAL REVIEW B
Volumen: 84
Ausgabe: 23
Zusammenfassung: 
Ultrathin Ce(2)O(3) layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface.
ISSN: 10980121
DOI: 10.1103/PhysRevB.84.235418

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