Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)
Autor(en): | Flege, Jan Ingo Kaemena, Bjoern Gevers, Sebastian Bertram, Florian Wilkens, Torsten Bruns, Daniel Baetjer, Jan Schmidt, Thomas Wollschlaeger, Joachim Falta, Jens |
Stichwörter: | CEO2 LAYERS; CL; CRYSTAL-STRUCTURE; DESORPTION; DIELECTRICS; Materials Science; Materials Science, Multidisciplinary; PHOTOELECTRON-SPECTROSCOPY; Physics; Physics, Applied; Physics, Condensed Matter; STABILITY; SURFACES; TEMPERATURE EPITAXIAL-GROWTH; THIN-FILMS | Erscheinungsdatum: | 2011 | Herausgeber: | AMER PHYSICAL SOC | Journal: | PHYSICAL REVIEW B | Volumen: | 84 | Ausgabe: | 23 | Zusammenfassung: | Ultrathin Ce(2)O(3) layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface. |
ISSN: | 10980121 | DOI: | 10.1103/PhysRevB.84.235418 |
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geprüft am 10.05.2024