Element specific surface reconstructions of islands during surfactant-mediated growth on Si(111)

Autor(en): Antons, A
Schroeder, K
Voigtlander, B
Cherepanov, V
Berger, R 
Blugel, S
Stichwörter: DIFFUSION; ENERGY-ELECTRON DIFFRACTION; EPITAXIAL-GROWTH; KINETICS; Physics; Physics, Multidisciplinary; PSEUDOPOTENTIALS; SI
Erscheinungsdatum: 2002
Herausgeber: AMER PHYSICAL SOC
Journal: PHYSICAL REVIEW LETTERS
Volumen: 89
Ausgabe: 23
Zusammenfassung: 
The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si-n clusters (nless than or equal to12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1x1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1x1) structure appears, while in the center the (root3xroot3) terrace structure is observed.
ISSN: 00319007
DOI: 10.1103/PhysRevLett.89.236101

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