Homogeneous Si films on CaF2/Si(111) due to boron enhanced solid phase epitaxy

Autor(en): Wollschlaeger, J.
Deiter, C.
Bierkandt, M.
Gerdes, A.
Baeumer, M.
Wang, C. R.
Mueller, B. H.
Hofmann, K. R.
Stichwörter: CAF2; Chemistry; Chemistry, Physical; grazing incidence X-ray diffraction; GROWTH; HETEROSTRUCTURES; INTERFACE; molecular beam epitaxy; MOLECULAR-BEAM EPITAXY; multilayers; Physics; Physics, Condensed Matter; RESONANT-TUNNELING DIODES; SI(111); SILICON; solid phase epitaxy; surfactant
Erscheinungsdatum: 2006
Herausgeber: ELSEVIER SCIENCE BV
Enthalten in: SURFACE SCIENCE
Band: 600
Ausgabe: 18, SI
Startseite: 3637
Seitenende: 3641
Zusammenfassung: 
The structure and morphology of Si/CaF2/Si(111) structures have been investigated by X-ray diffraction (XRD, GIXRD) and X-ray photoelectron spectroscopy (XPS). While CaF2 films were grown via molecular beam epitaxy (MBE), Si films on CaF2/Si(111) are fabricated by surfactant enhanced solid phase epitaxy (SE-SPE). Here Boron was used as a surfactant to obtain semiconductor films of homogeneous thickness. The Si films are entirely relaxed while the CaF2 films have both pseudomorphic and relaxed crystallites. After exposure to ambient conditions, the Si films have a very thin native oxide film. The homogeneous Si film partially prevents the incorporation of impurities at the interface between the Si substrate and CaF2 via migration along residual defects of the CaF2 film. (c) 2006 Elsevier B.V. All rights reserved.
Beschreibung: 
23rd European Conference on Surface Science (ECOSS-23), Freie Univ, Berlin, GERMANY, SEP 04-09, 2005
ISSN: 00396028
DOI: 10.1016/j.susc.2005.12.071

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