XPS characterisation of neodymium gallate wafers
Autor(en): | Talik, E Kruczek, A Sakowska, H Ujma, Z Gala, M Neumann, M |
Stichwörter: | Chemistry; Chemistry, Physical; CRYSTALS; electronic state; GAN; GROWTH; Materials Science; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering; photoelectron spectroscopy; single crystal; SUBSTRATE | Erscheinungsdatum: | 2004 | Herausgeber: | ELSEVIER SCIENCE SA | Journal: | JOURNAL OF ALLOYS AND COMPOUNDS | Volumen: | 377 | Ausgabe: | 1-2 | Startseite: | 259 | Seitenende: | 267 | Zusammenfassung: | XPS examinations of NdGaO3 single crystals were performed. A change of the chemical composition was found in wafers cut from the beginning, middle and end part of a crystal crown along the [011] direction. The existence of core level satellites at low binding energy related to defects was revealed. Unpolished, polished and substrates etched with H3PO4 show a decrease of gallium concentration in relation to a broken surface and to the nominal composition. Annealing of the substrates at different temperatures causes a decomposition due to escape of gallium not only from the surface but from inner parts as well. A comparison of the wafers from the crystals grown along different crystallographic direction reveals changes of the chemical composition and a variable level of defects. This was confirmed by etch pitch density measurements. The above measurements demonstrate the high sensitivity of gallium on processing. (C) 2004 Elsevier B.V. All rights reserved. |
ISSN: | 09258388 | DOI: | 10.1016/j.jallcom.2004.01.037 |
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geprüft am 18.05.2024